Epitaxial growth of <i>β</i>-Ga₂O₃ by hot-wall MOCVD

The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N SiC, has been applied the epitaxial growth of β-Ga 2 O 3 . Epitaxial layers at rates (above 1 μm/h), low reagent flows, reduced temperatures (740 °C) are demonstrated. A crystalline a c-plane sapphire substrate is attained corroborated by combination x-ray diffraction, high-resolution scanning transmission electron microscopy, spectroscopic ellipsometry measurements. MOCVD process transferred homoepitaxy, single-crystalline homoepitaxial demonstrated with [Formula: see text]01 rocking curve width 118 arc sec, which comparable those edge-defined film-fed grown ([Formula: text]01) substrates, indicative similar dislocation densities for epilayers substrates. Hence, proposed prospective method be further explored fabrication